A citation-based method for searching scientific literature

Quoc An Vu, Yong Seon Shin, Young Rae Kim, Van Luan Nguyen, Won Tae Kang, Hyun Kim, Dinh Hoa Luong, Il Min Lee, Kiyoung Lee, Dong-Su Ko, Jinseong Heo, Seongjun Park, Young Hee Lee, Woo Jong Yu. Nat Commun 2016
Times Cited: 90







List of co-cited articles
1132 articles co-cited >1



Times Cited
  Times     Co-cited
Similarity


Controlled charge trapping by molybdenum disulphide and graphene in ultrathin heterostructured memory devices.
Min Sup Choi, Gwan-Hyoung Lee, Young-Jun Yu, Dae-Yeong Lee, Seung Hwan Lee, Philip Kim, James Hone, Won Jong Yoo. Nat Commun 2013
274
36

Electronics and optoelectronics of two-dimensional transition metal dichalcogenides.
Qing Hua Wang, Kourosh Kalantar-Zadeh, Andras Kis, Jonathan N Coleman, Michael S Strano. Nat Nanotechnol 2012
32

A semi-floating gate memory based on van der Waals heterostructures for quasi-non-volatile applications.
Chunsen Liu, Xiao Yan, Xiongfei Song, Shijin Ding, David Wei Zhang, Peng Zhou. Nat Nanotechnol 2018
98
32

Single-layer MoS2 transistors.
B Radisavljevic, A Radenovic, J Brivio, V Giacometti, A Kis. Nat Nanotechnol 2011
30

Nonvolatile memory cells based on MoS2/graphene heterostructures.
Simone Bertolazzi, Daria Krasnozhon, Andras Kis. ACS Nano 2013
315
30

Van der Waals heterostructures.
A K Geim, I V Grigorieva. Nature 2013
27

Electric field effect in atomically thin carbon films.
K S Novoselov, A K Geim, S V Morozov, D Jiang, Y Zhang, S V Dubonos, I V Grigorieva, A A Firsov. Science 2004
27

Boron nitride substrates for high-quality graphene electronics.
C R Dean, A F Young, I Meric, C Lee, L Wang, S Sorgenfrei, K Watanabe, T Taniguchi, P Kim, K L Shepard,[...]. Nat Nanotechnol 2010
25

Atomically thin MoS₂: a new direct-gap semiconductor.
Kin Fai Mak, Changgu Lee, James Hone, Jie Shan, Tony F Heinz. Phys Rev Lett 2010
21

2D materials and van der Waals heterostructures.
K S Novoselov, A Mishchenko, A Carvalho, A H Castro Neto. Science 2016
21

Black phosphorus field-effect transistors.
Likai Li, Yijun Yu, Guo Jun Ye, Qingqin Ge, Xuedong Ou, Hua Wu, Donglai Feng, Xian Hui Chen, Yuanbo Zhang. Nat Nanotechnol 2014
20

A High-On/Off-Ratio Floating-Gate Memristor Array on a Flexible Substrate via CVD-Grown Large-Area 2D Layer Stacking.
Quoc An Vu, Hyun Kim, Van Luan Nguyen, Ui Yeon Won, Subash Adhikari, Kunnyun Kim, Young Hee Lee, Woo Jong Yu. Adv Mater 2017
31
54

Graphene-MoS2 hybrid structures for multifunctional photoresponsive memory devices.
Kallol Roy, Medini Padmanabhan, Srijit Goswami, T Phanindra Sai, Gopalakrishnan Ramalingam, Srinivasan Raghavan, Arindam Ghosh. Nat Nanotechnol 2013
448
17

Tunable charge-trap memory based on few-layer MoS2.
Enze Zhang, Weiyi Wang, Cheng Zhang, Yibo Jin, Guodong Zhu, Qingqing Sun, David Wei Zhang, Peng Zhou, Faxian Xiu. ACS Nano 2015
72
22

Layered memristive and memcapacitive switches for printable electronics.
Alexander A Bessonov, Marina N Kirikova, Dmitrii I Petukhov, Mark Allen, Tapani Ryhänen, Marc J A Bailey. Nat Mater 2015
140
17

Multi-terminal memtransistors from polycrystalline monolayer molybdenum disulfide.
Vinod K Sangwan, Hong-Sub Lee, Hadallia Bergeron, Itamar Balla, Megan E Beck, Kan-Sheng Chen, Mark C Hersam. Nature 2018
175
17

Vertically stacked multi-heterostructures of layered materials for logic transistors and complementary inverters.
Woo Jong Yu, Zheng Li, Hailong Zhou, Yu Chen, Yang Wang, Yu Huang, Xiangfeng Duan. Nat Mater 2013
341
16

Multi-terminal transport measurements of MoS2 using a van der Waals heterostructure device platform.
Xu Cui, Gwan-Hyoung Lee, Young Duck Kim, Ghidewon Arefe, Pinshane Y Huang, Chul-Ho Lee, Daniel A Chenet, Xian Zhang, Lei Wang, Fan Ye,[...]. Nat Nanotechnol 2015
397
16

Electronics based on two-dimensional materials.
Gianluca Fiori, Francesco Bonaccorso, Giuseppe Iannaccone, Tomás Palacios, Daniel Neumaier, Alan Seabaugh, Sanjay K Banerjee, Luigi Colombo. Nat Nanotechnol 2014
740
16

Light-emitting diodes by band-structure engineering in van der Waals heterostructures.
F Withers, O Del Pozo-Zamudio, A Mishchenko, A P Rooney, A Gholinia, K Watanabe, T Taniguchi, S J Haigh, A K Geim, A I Tartakovskii,[...]. Nat Mater 2015
464
16

Atomristor: Nonvolatile Resistance Switching in Atomic Sheets of Transition Metal Dichalcogenides.
Ruijing Ge, Xiaohan Wu, Myungsoo Kim, Jianping Shi, Sushant Sonde, Li Tao, Yanfeng Zhang, Jack C Lee, Deji Akinwande. Nano Lett 2018
91
16

A MoS2 /PTCDA Hybrid Heterojunction Synapse with Efficient Photoelectric Dual Modulation and Versatility.
Shuiyuan Wang, Chunsheng Chen, Zhihao Yu, Yongli He, Xiaoyao Chen, Qing Wan, Yi Shi, David Wei Zhang, Hao Zhou, Xinran Wang,[...]. Adv Mater 2019
83
18

Atomically thin p-n junctions with van der Waals heterointerfaces.
Chul-Ho Lee, Gwan-Hyoung Lee, Arend M van der Zande, Wenchao Chen, Yilei Li, Minyong Han, Xu Cui, Ghidewon Arefe, Colin Nuckolls, Tony F Heinz,[...]. Nat Nanotechnol 2014
734
15

Phosphorene: an unexplored 2D semiconductor with a high hole mobility.
Han Liu, Adam T Neal, Zhen Zhu, Zhe Luo, Xianfan Xu, David Tománek, Peide D Ye. ACS Nano 2014
15

Memristive devices for computing.
J Joshua Yang, Dmitri B Strukov, Duncan R Stewart. Nat Nanotechnol 2013
662
15

Gate-tunable memristive phenomena mediated by grain boundaries in single-layer MoS2.
Vinod K Sangwan, Deep Jariwala, In Soo Kim, Kan-Sheng Chen, Tobin J Marks, Lincoln J Lauhon, Mark C Hersam. Nat Nanotechnol 2015
185
15

Ion Gated Synaptic Transistors Based on 2D van der Waals Crystals with Tunable Diffusive Dynamics.
Jiadi Zhu, Yuchao Yang, Rundong Jia, Zhongxin Liang, Wen Zhu, Zia Ur Rehman, Lin Bao, Xiaoxian Zhang, Yimao Cai, Li Song,[...]. Adv Mater 2018
102
15

Ionic modulation and ionic coupling effects in MoS2 devices for neuromorphic computing.
Xiaojian Zhu, Da Li, Xiaogan Liang, Wei D Lu. Nat Mater 2019
101
15

Synaptic Barristor Based on Phase-Engineered 2D Heterostructures.
Woong Huh, Seonghoon Jang, Jae Yoon Lee, Donghun Lee, Donghun Lee, Jung Min Lee, Hong-Gyu Park, Jong Chan Kim, Hu Young Jeong, Gunuk Wang,[...]. Adv Mater 2018
43
32

Two-Terminal Multibit Optical Memory via van der Waals Heterostructure.
Minh Dao Tran, Hyun Kim, Jun Suk Kim, Manh Ha Doan, Tuan Khanh Chau, Quoc An Vu, Ji-Hee Kim, Young Hee Lee. Adv Mater 2019
36
38

Highly efficient gate-tunable photocurrent generation in vertical heterostructures of layered materials.
Woo Jong Yu, Yuan Liu, Hailong Zhou, Anxiang Yin, Zheng Li, Yu Huang, Xiangfeng Duan. Nat Nanotechnol 2013
409
14

Strong light-matter interactions in heterostructures of atomically thin films.
L Britnell, R M Ribeiro, A Eckmann, R Jalil, B D Belle, A Mishchenko, Y-J Kim, R V Gorbachev, T Georgiou, S V Morozov,[...]. Science 2013
778
14

Electroluminescence and photocurrent generation from atomically sharp WSe2/MoS2 heterojunction p-n diodes.
Rui Cheng, Dehui Li, Hailong Zhou, Chen Wang, Anxiang Yin, Shan Jiang, Yuan Liu, Yu Chen, Yu Huang, Xiangfeng Duan. Nano Lett 2014
351
14

Large-area synthesis of high-quality and uniform graphene films on copper foils.
Xuesong Li, Weiwei Cai, Jinho An, Seyoung Kim, Junghyo Nah, Dongxing Yang, Richard Piner, Aruna Velamakanni, Inhwa Jung, Emanuel Tutuc,[...]. Science 2009
14

Two-dimensional multibit optoelectronic memory with broadband spectrum distinction.
Du Xiang, Tao Liu, Jilian Xu, Jun Y Tan, Zehua Hu, Bo Lei, Yue Zheng, Jing Wu, A H Castro Neto, Lei Liu,[...]. Nat Commun 2018
61
21

Floating gate memory-based monolayer MoS2 transistor with metal nanocrystals embedded in the gate dielectrics.
Jingli Wang, Xuming Zou, Xiangheng Xiao, Lei Xu, Chunlan Wang, Changzhong Jiang, Johnny C Ho, Ti Wang, Jinchai Li, Lei Liao. Small 2015
36
36

Small footprint transistor architecture for photoswitching logic and in situ memory.
Chunsen Liu, Huawei Chen, Xiang Hou, Heng Zhang, Jun Han, Yu-Gang Jiang, Xiaoyang Zeng, David Wei Zhang, Peng Zhou. Nat Nanotechnol 2019
49
26

Field-effect tunneling transistor based on vertical graphene heterostructures.
L Britnell, R V Gorbachev, R Jalil, B D Belle, F Schedin, A Mishchenko, T Georgiou, M I Katsnelson, L Eaves, S V Morozov,[...]. Science 2012
764
13


Recent Advances in Two-Dimensional Materials beyond Graphene.
Ganesh R Bhimanapati, Zhong Lin, Vincent Meunier, Yeonwoong Jung, Judy Cha, Saptarshi Das, Di Xiao, Youngwoo Son, Michael S Strano, Valentino R Cooper,[...]. ACS Nano 2015
584
13

A subthermionic tunnel field-effect transistor with an atomically thin channel.
Deblina Sarkar, Xuejun Xie, Wei Liu, Wei Cao, Jiahao Kang, Yongji Gong, Stephan Kraemer, Pulickel M Ajayan, Kaustav Banerjee. Nature 2015
211
13

The chemistry of two-dimensional layered transition metal dichalcogenide nanosheets.
Manish Chhowalla, Hyeon Suk Shin, Goki Eda, Lain-Jong Li, Kian Ping Loh, Hua Zhang. Nat Chem 2013
13

Tuning Carrier Tunneling in van der Waals Heterostructures for Ultrahigh Detectivity.
Quoc An Vu, Jin Hee Lee, Van Luan Nguyen, Yong Seon Shin, Seong Chu Lim, Kiyoung Lee, Jinseong Heo, Seongjun Park, Kunnyun Kim, Young Hee Lee,[...]. Nano Lett 2017
50
24

Two-dimensional non-volatile programmable p-n junctions.
Dong Li, Mingyuan Chen, Zhengzong Sun, Peng Yu, Zheng Liu, Pulickel M Ajayan, Zengxing Zhang. Nat Nanotechnol 2017
92
13

Memristive Behavior and Ideal Memristor of 1T Phase MoS2 Nanosheets.
Peifu Cheng, Kai Sun, Yun Hang Hu. Nano Lett 2016
73
16

Memristors with diffusive dynamics as synaptic emulators for neuromorphic computing.
Zhongrui Wang, Saumil Joshi, Sergey E Savel'ev, Hao Jiang, Rivu Midya, Peng Lin, Miao Hu, Ning Ge, John Paul Strachan, Zhiyong Li,[...]. Nat Mater 2017
386
13

Synaptic electronics: materials, devices and applications.
Duygu Kuzum, Shimeng Yu, H-S Philip Wong. Nanotechnology 2013
236
13

Vertical MoS2 Double-Layer Memristor with Electrochemical Metallization as an Atomic-Scale Synapse with Switching Thresholds Approaching 100 mV.
Renjing Xu, Houk Jang, Min-Hyun Lee, Dovran Amanov, Yeonchoo Cho, Haeryong Kim, Seongjun Park, Hyeon-Jin Shin, Donhee Ham. Nano Lett 2019
63
19

Artificial optic-neural synapse for colored and color-mixed pattern recognition.
Seunghwan Seo, Seo-Hyeon Jo, Sungho Kim, Jaewoo Shim, Seyong Oh, Jeong-Hoon Kim, Keun Heo, Jae-Woong Choi, Changhwan Choi, Saeroonter Oh,[...]. Nat Commun 2018
110
13

Vertical field-effect transistor based on graphene-WS2 heterostructures for flexible and transparent electronics.
Thanasis Georgiou, Rashid Jalil, Branson D Belle, Liam Britnell, Roman V Gorbachev, Sergey V Morozov, Yong-Jin Kim, Ali Gholinia, Sarah J Haigh, Oleg Makarovsky,[...]. Nat Nanotechnol 2013
552
12


Co-cited is the co-citation frequency, indicating how many articles cite the article together with the query article. Similarity is the co-citation as percentage of the times cited of the query article or the article in the search results, whichever is the lowest. These numbers are calculated for the last 100 citations when articles are cited more than 100 times.