A citation-based method for searching scientific literature

Congli He, Jian Tang, Da-Shan Shang, Jianshi Tang, Yue Xi, Shuopei Wang, Na Li, Qingtian Zhang, Ji-Kai Lu, Zheng Wei, Qinqin Wang, Cheng Shen, Jiawei Li, Shipeng Shen, Jianxin Shen, Rong Yang, Dongxia Shi, Huaqiang Wu, Shouguo Wang, Guangyu Zhang. ACS Appl Mater Interfaces 2020
Times Cited: 12







List of co-cited articles
83 articles co-cited >1



Times Cited
  Times     Co-cited
Similarity


Emulating Bilingual Synaptic Response Using a Junction-Based Artificial Synaptic Device.
He Tian, Xi Cao, Yujun Xie, Xiaodong Yan, Andrew Kostelec, Don DiMarzio, Cheng Chang, Li-Dong Zhao, Wei Wu, Jesse Tice,[...]. ACS Nano 2017
24
41

Synaptic Barristor Based on Phase-Engineered 2D Heterostructures.
Woong Huh, Seonghoon Jang, Jae Yoon Lee, Donghun Lee, Donghun Lee, Jung Min Lee, Hong-Gyu Park, Jong Chan Kim, Hu Young Jeong, Gunuk Wang,[...]. Adv Mater 2018
34
41

Van der Waals heterostructures.
A K Geim, I V Grigorieva. Nature 2013
41

Nonvolatile memory cells based on MoS2/graphene heterostructures.
Simone Bertolazzi, Daria Krasnozhon, Andras Kis. ACS Nano 2013
294
33

Two-terminal floating-gate memory with van der Waals heterostructures for ultrahigh on/off ratio.
Quoc An Vu, Yong Seon Shin, Young Rae Kim, Van Luan Nguyen, Won Tae Kang, Hyun Kim, Dinh Hoa Luong, Il Min Lee, Kiyoung Lee, Dong-Su Ko,[...]. Nat Commun 2016
75
33

2D materials and van der Waals heterostructures.
K S Novoselov, A Mishchenko, A Carvalho, A H Castro Neto. Science 2016
33

Hysteresis in single-layer MoS2 field effect transistors.
Dattatray J Late, Bin Liu, H S S Ramakrishna Matte, Vinayak P Dravid, C N R Rao. ACS Nano 2012
345
25


Abnormal Multiple Charge Memory States in Exfoliated Few-Layer WSe2 Transistors.
Mikai Chen, Yifan Wang, Nathan Shepherd, Chad Huard, Jiantao Zhou, L J Guo, Wei Lu, Xiaogan Liang. ACS Nano 2017
20
25

Gate-tunable memristive phenomena mediated by grain boundaries in single-layer MoS2.
Vinod K Sangwan, Deep Jariwala, In Soo Kim, Kan-Sheng Chen, Tobin J Marks, Lincoln J Lauhon, Mark C Hersam. Nat Nanotechnol 2015
171
25

Tunable charge-trap memory based on few-layer MoS2.
Enze Zhang, Weiyi Wang, Cheng Zhang, Yibo Jin, Guodong Zhu, Qingqing Sun, David Wei Zhang, Peng Zhou, Faxian Xiu. ACS Nano 2015
63
25

Graphene Dynamic Synapse with Modulatable Plasticity.
He Tian, Wentian Mi, Xue-Feng Wang, Haiming Zhao, Qian-Yi Xie, Cheng Li, Yu-Xing Li, Yi Yang, Tian-Ling Ren. Nano Lett 2015
60
25

Floating gate memory-based monolayer MoS2 transistor with metal nanocrystals embedded in the gate dielectrics.
Jingli Wang, Xuming Zou, Xiangheng Xiao, Lei Xu, Chunlan Wang, Changzhong Jiang, Johnny C Ho, Ti Wang, Jinchai Li, Lei Liao. Small 2015
33
25

Controlled charge trapping by molybdenum disulphide and graphene in ultrathin heterostructured memory devices.
Min Sup Choi, Gwan-Hyoung Lee, Young-Jun Yu, Dae-Yeong Lee, Seung Hwan Lee, Philip Kim, James Hone, Won Jong Yoo. Nat Commun 2013
255
25

Artificial brains. A million spiking-neuron integrated circuit with a scalable communication network and interface.
Paul A Merolla, John V Arthur, Rodrigo Alvarez-Icaza, Andrew S Cassidy, Jun Sawada, Filipp Akopyan, Bryan L Jackson, Nabil Imam, Chen Guo, Yutaka Nakamura,[...]. Science 2014
466
25

Is heterosynaptic modulation essential for stabilizing Hebbian plasticity and memory?
C H Bailey, M Giustetto, Y Y Huang, R D Hawkins, E R Kandel. Nat Rev Neurosci 2000
223
25

MoS2 Memtransistors Fabricated by Localized Helium Ion Beam Irradiation.
Jakub Jadwiszczak, Darragh Keane, Pierce Maguire, Conor P Cullen, Yangbo Zhou, Huading Song, Clive Downing, Daniel Fox, Niall McEvoy, Rui Zhu,[...]. ACS Nano 2019
20
25

Neuromorphic nanoelectronic materials.
Vinod K Sangwan, Mark C Hersam. Nat Nanotechnol 2020
53
25

Multi-terminal memtransistors from polycrystalline monolayer molybdenum disulfide.
Vinod K Sangwan, Hong-Sub Lee, Hadallia Bergeron, Itamar Balla, Megan E Beck, Kan-Sheng Chen, Mark C Hersam. Nature 2018
151
25

Synaptic computation.
L F Abbott, Wade G Regehr. Nature 2004
676
25

Time-Tailoring van der Waals Heterostructures for Human Memory System Programming.
Huawei Chen, Chunsen Liu, Zuheng Wu, Yongli He, Zhen Wang, Heng Zhang, Qing Wan, Weida Hu, David Wei Zhang, Ming Liu,[...]. Adv Sci (Weinh) 2019
10
30

Two-dimensional materials for next-generation computing technologies.
Chunsen Liu, Huawei Chen, Shuiyuan Wang, Qi Liu, Yu-Gang Jiang, David Wei Zhang, Ming Liu, Peng Zhou. Nat Nanotechnol 2020
50
25

Graphene-graphene oxide floating gate transistor memory.
Sukjae Jang, Euyheon Hwang, Jung Heon Lee, Ho Seok Park, Jeong Ho Cho. Small 2015
15
16

A Dynamically Reconfigurable Ambipolar Black Phosphorus Memory Device.
He Tian, Bingchen Deng, Matthew L Chin, Xiaodong Yan, Hao Jiang, Shu-Jen Han, Vivian Sun, Qiangfei Xia, Madan Dubey, Fengnian Xia,[...]. ACS Nano 2016
24
16

Graphene and two-dimensional materials for silicon technology.
Deji Akinwande, Cedric Huyghebaert, Ching-Hua Wang, Martha I Serna, Stijn Goossens, Lain-Jong Li, H-S Philip Wong, Frank H L Koppens. Nature 2019
115
16

Gate tunable giant anisotropic resistance in ultra-thin GaTe.
Hanwen Wang, Mao-Lin Chen, Mengjian Zhu, Yaning Wang, Baojuan Dong, Xingdan Sun, Xiaorong Zhang, Shimin Cao, Xiaoxi Li, Jianqi Huang,[...]. Nat Commun 2019
17
16

Graphene flash memory.
Augustin J Hong, Emil B Song, Hyung Suk Yu, Matthew J Allen, Jiyoung Kim, Jesse D Fowler, Jonathan K Wassei, Youngju Park, Yong Wang, Jin Zou,[...]. ACS Nano 2011
64
16

Aligned Carbon Nanotube Synaptic Transistors for Large-Scale Neuromorphic Computing.
Ivan Sanchez Esqueda, Xiaodong Yan, Chris Rutherglen, Alex Kane, Tyler Cain, Phil Marsh, Qingzhou Liu, Kosmas Galatsis, Han Wang, Chongwu Zhou. ACS Nano 2018
31
16

Charge trap memory based on few-layer black phosphorus.
Qi Feng, Faguang Yan, Wengang Luo, Kaiyou Wang. Nanoscale 2016
28
16

Atomristor: Nonvolatile Resistance Switching in Atomic Sheets of Transition Metal Dichalcogenides.
Ruijing Ge, Xiaohan Wu, Myungsoo Kim, Jianping Shi, Sushant Sonde, Li Tao, Yanfeng Zhang, Jack C Lee, Deji Akinwande. Nano Lett 2018
74
16

Dual-Gated MoS2 Neuristor for Neuromorphic Computing.
Lin Bao, Jiadi Zhu, Zhizhen Yu, Rundong Jia, Qifeng Cai, Zongwei Wang, Liying Xu, Yanqing Wu, Yuchao Yang, Yimao Cai,[...]. ACS Appl Mater Interfaces 2019
9
22

Bridging Biological and Artificial Neural Networks with Emerging Neuromorphic Devices: Fundamentals, Progress, and Challenges.
Jianshi Tang, Fang Yuan, Xinke Shen, Zhongrui Wang, Mingyi Rao, Yuanyuan He, Yuhao Sun, Xinyi Li, Wenbin Zhang, Yijun Li,[...]. Adv Mater 2019
51
16

Graphene-based atomic-scale switches.
Brian Standley, Wenzhong Bao, Hang Zhang, Jehoshua Bruck, Chun Ning Lau, Marc Bockrath. Nano Lett 2008
104
16

Memristive devices for computing.
J Joshua Yang, Dmitri B Strukov, Duncan R Stewart. Nat Nanotechnol 2013
621
16

Mimicking Neurotransmitter Release in Chemical Synapses via Hysteresis Engineering in MoS2 Transistors.
Andrew J Arnold, Ali Razavieh, Joseph R Nasr, Daniel S Schulman, Chad M Eichfeld, Saptarshi Das. ACS Nano 2017
63
16

2D materials: to graphene and beyond.
Rubén Mas-Ballesté, Cristina Gómez-Navarro, Julio Gómez-Herrero, Félix Zamora. Nanoscale 2011
381
16

Synaptic electronics: materials, devices and applications.
Duygu Kuzum, Shimeng Yu, H-S Philip Wong. Nanotechnology 2013
217
16

Ionic modulation and ionic coupling effects in MoS2 devices for neuromorphic computing.
Xiaojian Zhu, Da Li, Xiaogan Liang, Wei D Lu. Nat Mater 2019
85
16

Electric and Light Dual-Gate Tunable MoS2 Memtransistor.
Siqi Yin, Cheng Song, Yiming Sun, Leilei Qiao, Bolun Wang, Yufei Sun, Kai Liu, Feng Pan, Xiaozhong Zhang. ACS Appl Mater Interfaces 2019
9
22

Nanoscale memristor device as synapse in neuromorphic systems.
Sung Hyun Jo, Ting Chang, Idongesit Ebong, Bhavitavya B Bhadviya, Pinaki Mazumder, Wei Lu. Nano Lett 2010
649
16

The chemistry of two-dimensional layered transition metal dichalcogenide nanosheets.
Manish Chhowalla, Hyeon Suk Shin, Goki Eda, Lain-Jong Li, Kian Ping Loh, Hua Zhang. Nat Chem 2013
16

The missing memristor found.
Dmitri B Strukov, Gregory S Snider, Duncan R Stewart, R Stanley Williams. Nature 2008
16

Deep learning.
Yann LeCun, Yoshua Bengio, Geoffrey Hinton. Nature 2015
16

A MoS2 /PTCDA Hybrid Heterojunction Synapse with Efficient Photoelectric Dual Modulation and Versatility.
Shuiyuan Wang, Chunsheng Chen, Zhihao Yu, Yongli He, Xiaoyao Chen, Qing Wan, Yi Shi, David Wei Zhang, Hao Zhou, Xinran Wang,[...]. Adv Mater 2019
67
16

Pattern Recognition Using Carbon Nanotube Synaptic Transistors with an Adjustable Weight Update Protocol.
Sungho Kim, Bongsik Choi, Meehyun Lim, Jinsu Yoon, Juhee Lee, Hee-Dong Kim, Sung-Jin Choi. ACS Nano 2017
69
16

Artificial optic-neural synapse for colored and color-mixed pattern recognition.
Seunghwan Seo, Seo-Hyeon Jo, Sungho Kim, Jaewoo Shim, Seyong Oh, Jeong-Hoon Kim, Keun Heo, Jae-Woong Choi, Changhwan Choi, Saeroonter Oh,[...]. Nat Commun 2018
87
16

Artificial Synaptic Emulators Based on MoS2 Flash Memory Devices with Double Floating Gates.
Sum-Gyun Yi, Myung Uk Park, Sung Hyun Kim, Chang Jun Lee, Junyoung Kwon, Gwan-Hyoung Lee, Kyung-Hwa Yoo. ACS Appl Mater Interfaces 2018
19
16

DEVICE TECHNOLOGY. Phase patterning for ohmic homojunction contact in MoTe₂.
Suyeon Cho, Sera Kim, Jung Ho Kim, Jiong Zhao, Jinbong Seok, Dong Hoon Keum, Jaeyoon Baik, Duk-Hyun Choe, K J Chang, Kazu Suenaga,[...]. Science 2015
299
16

Nonvolatile Memories Based on Graphene and Related 2D Materials.
Simone Bertolazzi, Paolo Bondavalli, Stephan Roche, Tamer San, Sung-Yool Choi, Luigi Colombo, Francesco Bonaccorso, Paolo Samorì. Adv Mater 2019
50
16

Multi-gate memristive synapses realized with the lateral heterostructure of 2D WSe2 and WO3.
Hui-Kai He, Rui Yang, He-Ming Huang, Fan-Fan Yang, Ya-Zhou Wu, Jamal Shaibo, Xin Guo. Nanoscale 2020
10
20


Co-cited is the co-citation frequency, indicating how many articles cite the article together with the query article. Similarity is the co-citation as percentage of the times cited of the query article or the article in the search results, whichever is the lowest. These numbers are calculated for the last 100 citations when articles are cited more than 100 times.