A citation-based method for searching scientific literature

Geonyeop Lee, Ji-Hwan Baek, Fan Ren, Stephen J Pearton, Gwan-Hyoung Lee, Jihyun Kim. Small 2021
Times Cited: 1







List of co-cited articles
articles co-cited >1



Times Cited
  Times     Co-cited
Similarity


Emerging device applications for semiconducting two-dimensional transition metal dichalcogenides.
Deep Jariwala, Vinod K Sangwan, Lincoln J Lauhon, Tobin J Marks, Mark C Hersam. ACS Nano 2014
702
100

Implementation of Complete Boolean Logic Functions in Single Complementary Resistive Switch.
Shuang Gao, Fei Zeng, Minjuan Wang, Guangyue Wang, Cheng Song, Feng Pan. Sci Rep 2015
22
100

Equivalent-accuracy accelerated neural-network training using analogue memory.
Stefano Ambrogio, Pritish Narayanan, Hsinyu Tsai, Robert M Shelby, Irem Boybat, Carmelo di Nolfo, Severin Sidler, Massimo Giordano, Martina Bodini, Nathan C P Farinha,[...]. Nature 2018
107
100

Single polymer-based ternary electronic memory material and device.
Shu-Juan Liu, Peng Wang, Qiang Zhao, Hui-Ying Yang, Jenlt Wong, Hui-Bin Sun, Xiao-Chen Dong, Wen-Peng Lin, Wei Huang. Adv Mater 2012
52
100

Two-Dimensional Boronate Ester Covalent Organic Framework Thin Films with Large Single Crystalline Domains for a Neuromorphic Memory Device.
SangWook Park, Zhongquan Liao, Bergoi Ibarlucea, Haoyuan Qi, Hung-Hsuan Lin, Daniel Becker, Jason Melidonie, Tao Zhang, Hafeesudeen Sahabudeen, Larysa Baraban,[...]. Angew Chem Int Ed Engl 2020
29
100

Electric field effect in atomically thin carbon films.
K S Novoselov, A K Geim, S V Morozov, D Jiang, Y Zhang, S V Dubonos, I V Grigorieva, A A Firsov. Science 2004
100

A synaptic memristor based on two-dimensional layered WSe2 nanosheets with short- and long-term plasticity.
Songwen Luo, Kanghong Liao, Peixian Lei, Ting Jiang, Siyi Chen, Qin Xie, Wenbo Luo, Wen Huang, Shuoguo Yuan, Wenjing Jie,[...]. Nanoscale 2021
2
100

Localized Heating and Switching in MoTe2-Based Resistive Memory Devices.
Isha M Datye, Miguel Muñoz Rojo, Eilam Yalon, Sanchit Deshmukh, Michal J Mleczko, Eric Pop. Nano Lett 2020
5
100

Solution-phase epitaxial growth of noble metal nanostructures on dispersible single-layer molybdenum disulfide nanosheets.
Xiao Huang, Zhiyuan Zeng, Shuyu Bao, Mengfei Wang, Xiaoying Qi, Zhanxi Fan, Hua Zhang. Nat Commun 2013
282
100

Electric-Field-Driven Dual Vacancies Evolution in Ultrathin Nanosheets Realizing Reversible Semiconductor to Half-Metal Transition.
Mengjie Lyu, Youwen Liu, Yuduo Zhi, Chong Xiao, Bingchuan Gu, Xuemin Hua, Shaojuan Fan, Yue Lin, Wei Bai, Wei Tong,[...]. J Am Chem Soc 2015
15
100

Energy Transfer from Quantum Dots to Graphene and MoS2: The Role of Absorption and Screening in Two-Dimensional Materials.
Archana Raja, Andrés Montoya Castillo, Johanna Zultak, Xiao-Xiao Zhang, Ziliang Ye, Cyrielle Roquelet, Daniel A Chenet, Arend M van der Zande, Pinshane Huang, Steffen Jockusch,[...]. Nano Lett 2016
63
100

Direct Observation of Indium Conductive Filaments in Transparent, Flexible, and Transferable Resistive Switching Memory.
Kai Qian, Roland Yingjie Tay, Meng-Fang Lin, Jingwei Chen, Huakai Li, Jinjun Lin, Jiangxin Wang, Guofa Cai, Viet Cuong Nguyen, Edwin Hang Tong Teo,[...]. ACS Nano 2017
20
100

In-sensor reservoir computing for language learning via two-dimensional memristors.
Linfeng Sun, Zhongrui Wang, Jinbao Jiang, Yeji Kim, Bomin Joo, Shoujun Zheng, Seungyeon Lee, Woo Jong Yu, Bai-Sun Kong, Heejun Yang. Sci Adv 2021
1
100


Alignment of organic semiconductor microstripes by two-phase dip-coating.
Mengmeng Li, Cunbin An, Wojciech Pisula, Klaus Müllen. Small 2014
12
100

Two-dimensional materials for next-generation computing technologies.
Chunsen Liu, Huawei Chen, Shuiyuan Wang, Qi Liu, Yu-Gang Jiang, David Wei Zhang, Ming Liu, Peng Zhou. Nat Nanotechnol 2020
50
100

Vertical MoS2 Double-Layer Memristor with Electrochemical Metallization as an Atomic-Scale Synapse with Switching Thresholds Approaching 100 mV.
Renjing Xu, Houk Jang, Min-Hyun Lee, Dovran Amanov, Yeonchoo Cho, Haeryong Kim, Seongjun Park, Hyeon-Jin Shin, Donhee Ham. Nano Lett 2019
50
100

Optically Stimulated Artificial Synapse Based on Layered Black Phosphorus.
Taimur Ahmed, Sruthi Kuriakose, Edwin L H Mayes, Rajesh Ramanathan, Vipul Bansal, Madhu Bhaskaran, Sharath Sriram, Sumeet Walia. Small 2019
33
100

Multi-gate memristive synapses realized with the lateral heterostructure of 2D WSe2 and WO3.
Hui-Kai He, Rui Yang, He-Ming Huang, Fan-Fan Yang, Ya-Zhou Wu, Jamal Shaibo, Xin Guo. Nanoscale 2020
10
100

Extremely Low Operating Current Resistive Memory Based on Exfoliated 2D Perovskite Single Crystals for Neuromorphic Computing.
He Tian, Lianfeng Zhao, Xuefeng Wang, Yao-Wen Yeh, Nan Yao, Barry P Rand, Tian-Ling Ren. ACS Nano 2017
52
100

Growth of environmentally stable transition metal selenide films.
Huihui Lin, Qi Zhu, Dajun Shu, Dongjing Lin, Jie Xu, Xianlei Huang, Wei Shi, Xiaoxiang Xi, Jiangwei Wang, Libo Gao. Nat Mater 2019
18
100

Gate Controlled Photocurrent Generation Mechanisms in High-Gain In₂Se₃ Phototransistors.
J O Island, S I Blanter, M Buscema, H S J van der Zant, A Castellanos-Gomez. Nano Lett 2015
97
100

A Monochloro Copper Phthalocyanine Memristor with High-Temperature Resilience for Electronic Synapse Applications.
Jia Zhou, Wen Li, Ye Chen, Yen-Hung Lin, Mingdong Yi, Jiayu Li, Yangzhou Qian, Yun Guo, Keyang Cao, Linghai Xie,[...]. Adv Mater 2021
3
100

Tunable and nonvolatile multibit data storage memory based on MoTe2/boron nitride/graphene heterostructures through contact engineering.
Enxiu Wu, Yuan Xie, Shijie Wang, Chen Wu, Daihua Zhang, Xiaodong Hu, Jing Liu. Nanotechnology 2020
2
100

Ionic modulation and ionic coupling effects in MoS2 devices for neuromorphic computing.
Xiaojian Zhu, Da Li, Xiaogan Liang, Wei D Lu. Nat Mater 2019
85
100


Monolayer optical memory cells based on artificial trap-mediated charge storage and release.
Juwon Lee, Sangyeon Pak, Young-Woo Lee, Yuljae Cho, John Hong, Paul Giraud, Hyeon Suk Shin, Stephen M Morris, Jung Inn Sohn, SeungNam Cha,[...]. Nat Commun 2017
47
100


Graphene analogues of layered metal selenides.
H S S Ramakrishna Matte, Blake Plowman, Ranjan Datta, C N R Rao. Dalton Trans 2011
22
100

MoS2 Memristors Exhibiting Variable Switching Characteristics toward Biorealistic Synaptic Emulation.
Da Li, Bin Wu, Xiaojian Zhu, Juntong Wang, Byunghoon Ryu, Wei D Lu, Wei Lu, Xiaogan Liang. ACS Nano 2018
37
100

Nonvolatile Memories Based on Graphene and Related 2D Materials.
Simone Bertolazzi, Paolo Bondavalli, Stephan Roche, Tamer San, Sung-Yool Choi, Luigi Colombo, Francesco Bonaccorso, Paolo Samorì. Adv Mater 2019
50
100

Large-scale growth of few-layer two-dimensional black phosphorus.
Zehan Wu, Yongxin Lyu, Yi Zhang, Ran Ding, Beining Zheng, Zhibin Yang, Shu Ping Lau, Xian Hui Chen, Jianhua Hao. Nat Mater 2021
5
100

Tunable Nonvolatile Memory Behaviors of PCBM-MoS2 2D Nanocomposites through Surface Deposition Ratio Control.
Wenzhen Lv, Honglei Wang, Linlin Jia, Xingxing Tang, Cheng Lin, Lihui Yuwen, Lianhui Wang, Wei Huang, Runfeng Chen. ACS Appl Mater Interfaces 2018
13
100

Effect of functional groups on microporous polymer based resistance switching memory devices.
Yaru Song, Jie Liu, Wanhui Li, Lei Liu, Ling Yang, Shengbin Lei, Wenping Hu. Chem Commun (Camb) 2020
2
100

A small-molecule-based ternary data-storage device.
Hua Li, Qingfeng Xu, Najun Li, Ru Sun, Jianfeng Ge, Jianmei Lu, Hongwei Gu, Feng Yan. J Am Chem Soc 2010
64
100

Hierarchical Hollow-Pore Nanostructure Bilayer Heterojunction Comprising Conjugated Polymers for High-Performance Flash Memory.
Yuhang Yin, Zhe Zhou, Xiaojing Wang, Huiwu Mao, Chaoyi Ban, Yuanbo Chen, Juqing Liu, Zhengdong Liu, Wei Huang. ACS Appl Mater Interfaces 2020
3
100

Two-dimensional transistors beyond graphene and TMDCs.
Yuan Liu, Xidong Duan, Yu Huang, Xiangfeng Duan. Chem Soc Rev 2018
62
100

Observation of single-defect memristor in an MoS2 atomic sheet.
Saban M Hus, Ruijing Ge, Po-An Chen, Liangbo Liang, Gavin E Donnelly, Wonhee Ko, Fumin Huang, Meng-Hsueh Chiang, An-Ping Li, Deji Akinwande. Nat Nanotechnol 2021
9
100

The renaissance of black phosphorus.
Xi Ling, Han Wang, Shengxi Huang, Fengnian Xia, Mildred S Dresselhaus. Proc Natl Acad Sci U S A 2015
366
100

Bi2O2Se-Based Memristor-Aided Logic.
Bo Liu, Yudi Zhao, Dharmendra Verma, Le An Wang, Hanyuan Liang, Hui Zhu, Lain-Jong Li, Tuo-Hung Hou, Chao-Sung Lai. ACS Appl Mater Interfaces 2021
1
100

Electric-field induced structural transition in vertical MoTe2- and Mo1-xWxTe2-based resistive memories.
Feng Zhang, Huairuo Zhang, Sergiy Krylyuk, Cory A Milligan, Yuqi Zhu, Dmitry Y Zemlyanov, Leonid A Bendersky, Benjamin P Burton, Albert V Davydov, Joerg Appenzeller. Nat Mater 2019
63
100

Wafer-Scale Synthesis of High-Quality Semiconducting Two-Dimensional Layered InSe with Broadband Photoresponse.
Zhibin Yang, Wenjing Jie, Chun-Hin Mak, Shenghuang Lin, Huihong Lin, Xianfeng Yang, Feng Yan, Shu Ping Lau, Jianhua Hao. ACS Nano 2017
59
100

Neuromorphic nanoelectronic materials.
Vinod K Sangwan, Mark C Hersam. Nat Nanotechnol 2020
53
100

Atomically Thin Femtojoule Memristive Device.
Huan Zhao, Zhipeng Dong, He Tian, Don DiMarzi, Myung-Geun Han, Lihua Zhang, Xiaodong Yan, Fanxin Liu, Lang Shen, Shu-Jen Han,[...]. Adv Mater 2017
27
100

Single-Atom Quantum-Point Contact Switch Using Atomically Thin Hexagonal Boron Nitride.
Revannath Dnyandeo Nikam, Krishn Gopal Rajput, Hyunsang Hwang. Small 2021
4
100

High-performance Langmuir-Blodgett monolayer transistors with high responsivity.
Yang Cao, Zhongming Wei, Song Liu, Lin Gan, Xuefeng Guo, Wei Xu, Michael L Steigerwald, Zhongfan Liu, Daoben Zhu. Angew Chem Int Ed Engl 2010
37
100

Resistive Switching Memory Devices Based on Proteins.
Hong Wang, Fanben Meng, Bowen Zhu, Wan Ru Leow, Yaqing Liu, Xiaodong Chen. Adv Mater 2015
46
100

Solution-Processed Two-Dimensional MoS2 Nanosheets: Preparation, Hybridization, and Applications.
Xiao Zhang, Zhuangchai Lai, Chaoliang Tan, Hua Zhang. Angew Chem Int Ed Engl 2016
163
100

Electronics based on two-dimensional materials.
Gianluca Fiori, Francesco Bonaccorso, Giuseppe Iannaccone, Tomás Palacios, Daniel Neumaier, Alan Seabaugh, Sanjay K Banerjee, Luigi Colombo. Nat Nanotechnol 2014
691
100

Observation of Room-Temperature Magnetoresistance in Monolayer MoS2 by Ferromagnetic Gating.
Wenjing Jie, Zhibin Yang, Fan Zhang, Gongxun Bai, Chi Wah Leung, Jianhua Hao. ACS Nano 2017
9
100


Co-cited is the co-citation frequency, indicating how many articles cite the article together with the query article. Similarity is the co-citation as percentage of the times cited of the query article or the article in the search results, whichever is the lowest. These numbers are calculated for the last 100 citations when articles are cited more than 100 times.